X-ray imaging ZnSe detectors for high-temperature industrial tomography applications
Andrii Sofiienko 1*, Geir Anton Johansen 2 and Volodymyr Degoda 3
1 University of Bergen, Allegaten 55, PO Box 7803, 5020 Bergen, Norway
2 Bergen University College, Inndalsveien 28, PO Box 7030, 5020 Bergen, Norway
3 Taras Shevchenko National University of Kyiv, Volodymyrs'ka 64, 01601 Kyiv, Ukraine
This work presents the results of an experimental investigation into the spectrometric properties of the wide-gap semiconductor ZnSe. Spectrometric measurements of X-rays with a 57Co point source show that a range of optimal values for the bias voltages of the ZnSe samples allow the influence of the noise to be minimised and simultaneously maximize a counting efficiency to X-rays. For the ZnSe sample explored, this range is from 500 V (2000 V/cm) to 750 V (3000 V/cm) in a temperature range from 20 °C to 130 °C. Under these conditions and with a low energy threshold of 35 keV the maximal noise count rate can be reduced to approximately 10 cps. The obtained results allow us to assume that monocrystalline ZnSe can be effectively used for the development of the radiometric imaging detectors of gamma and X-ray radiation operated in a wide temperature range up to at least 130 °C.
Keywords X-ray, ZnSe, detector, spectroscopy
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